ECE 482 ONL - Digital IC Design
Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters. Course Information: 3 undergraduate hours. 3 graduate hours. Prerequisite: ECE 342.
Option 1Number of Required Visit(s): 0
Course Level: Graduate