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ECE 482 ONL - Digital IC Design

Campus: Urbana-Champaign


Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters. Course Information: 3 undergraduate hours. 3 graduate hours. Prerequisite: ECE 342.

Option 1

Number of Required Visit(s): 0

Course Level: Graduate

Credit: 3

Term(s): Fall


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